The Chinese Academy of Sciences has made new progress in reversing the magnetic all-electric control of the semiconductor surface
With the support of the National Fund Committee and the Innovation Project of the Chinese Academy of Sciences, Chang Kai Researcher and Ph.D. student Zhu Jiaji of the Institute of Semiconductors collaborated with Professor Zhang Shousheng from the Department of Physics at Stanford University in the United States to theoretically study the possibility of magnetic full electrical control on BiSe and other materials.
Controlling the magnetic properties of materials by controlling the carrier concentration is an important research direction in the field of semiconductor spintronics. This control scheme has been implemented in the dilute magnetic semiconductor GaMnAs. But when the Fermi level is in the energy gap of ordinary semiconductor materials, the semiconductor is in an insulating state, so the spin correlation between the magnetic ions caused by electrons or holes disappears, and the ferromagnetism of the system disappears. The recently discovered new topological insulator material exhibits an inverted energy band structure and a narrow band gap (about 0.4 eV), and has peculiar new characteristics: its body is insulated, but the surface shows metallic characteristics. The research on the transport and magneto-optical properties of such materials is becoming one of the hotspots in the international frontier research field.
This metal-like electronic surface state has amazing spin polarization and chiral properties, and is not easily damaged by impurity scattering due to the protection of time inversion symmetry. How to use the electric field to control the magnetism of the surface has caused great research interest. Chang Kai et al. Theoretically studied the possibility of magnetic all-electric control on the surface of BiSe and other materials. The surface state electrons have chiral properties, leading to twisted RKKY interactions between magnetic ions. This RKKY interaction is composed of Heisenberg term, DM term and Ising term. By changing the grid voltage, the relative weight of each item can be changed, thereby controlling the form of spin correlation between magnetic ions and forming different magnetic phases.
The results of this study provide a theoretical basis for the realization of a strongly controlled system with manual control. Related articles were published in Phys. Rev. Lett. 106, 097201 (2011).
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